Point d'origine
Hubei, China
Instrument classification
Classe JE
Laser medium
GaAlAs Semiconductor
Laser wavelength
808nm and 650nm
Terminal laser output
11 laser beams with 650nm,4 laser beams with 808nm
Maximum output power
Probe A is 180mW,Probe B is 775mW
Timing setting
10-60 minutes
Relative humidity
below 80%
Atmospheric pressure
86kpa-106kpa
Working temperature
5 °C ~ 40 °C