Point d'origine
Jiangsu, China
Matériel
Carbure de silicium (SiC)
Caractère réfractaire (degré)
Common (1580°< Refractoriness< 1770°)
Service de traitement
Soudage, Poinçonnage
Service temperature
1200-1650 C
Coefficient of thermal expansion:
4.5K-1*10-6
Material
RBSIC, RSC, NSC, SSiC
Bend Strength:
400-580 MPa
Product name
Good Polished SSIC SIC silicon carbide solid rod for semiconductor