Point d'origine
Hebei, China
Matériel
Carbure de silicium (SiC)
Caractère réfractaire (degré)
Common (1580°< Refractoriness< 1770°)
Service de traitement
Moulage
Product name
recrystallized silicon carbide plate rsic plate
Raw material
Imported from Saint-Gobain
Sintering temperature
2400℃
Using temperature
1200-1650℃
Bending srength(1100degree)
100-120Mpa
Thermal conducitivity
26W/MK
Thermal expansion a @20-1000degree
5.0
Key word
Recrystallized Silicon Carbide Plate