Description
Patch transistor
Point d'origine
Guangdong, China
Température de fonctionnement
-55~+150°C
Gain de courant continu (hFE) (Min) @ Ic, Vce
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Température de fonctionnement
-55~+150°C
Résistance-socle (R1)
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FET Caractéristique
Carbure de silicium (SiC)
Charge de porte (Qg) (Max) @ Vgs
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Capacité d'entrée (Ciss) (Max) @ Vds
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Fréquence
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Courant nominal (ampères)
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Facteur de bruit
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Alimentation-Sortie
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Tension Nominale
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Tension d'entraînement (Rds maximum allumé, Rds minimum allumé)
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Vgs (Max)
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Type IGBT
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Vce (on) (Max) @ Vge, Ic
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Capacité d'entrée (Cies) @ Vce
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Thermistance NTC
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Tension
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Tension-décalage (Vt)
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Applications
Household appliances, smart home
Transistor Type
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Type
Field-Effect Transistor